首页
>
>
投稿咨询
微信添加科研助理

了解相关问题

加急服务
微信添加科研助理

了解相关问题

IEEE Journal of the Electron Devices Society
ISSN：2168-6734

IEEE Journal of the Electron Devices Society

IEEE J ELECTRON DEVI
学科领域：工程技术
是否预警：不在预警名单内
是否OA：是
录用周期：9 Weeks
新锐分区：工程技术3区
年发文量：142
影响因子：2.4
JCR分区：Q3

基本信息

IEEE Journal of the Electron Devices Society（J-EDS）是一份开放存取、全电子化的科学期刊，发表从基础到应用研究的论文，这些论文在科学上是严谨的，并与电子器件相关。J-EDS出版了有关电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性的原创性和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件和新兴材料，应用于生物电子学、生物医学电子学、计算、通信、显示、微机电、成像、微致动器、纳米器件、光电子、光伏、功率IC和微传感器。还出版了关于这些主题的辅导和评论论文。此外，偶尔也会出版关于特定领域更深入和更广泛的论文集的特刊。J-EDS出版所有被认为是技术上有效和原创的论文。
2168-6734SCIE/Scopus收录/DOAJ开放期刊
2.4
点击查看最新影响趋势>
2.7
新
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
否
N/A
新
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q3
195/368
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q3
186/368
23
142
点击查看年发文量趋势图>
21%-9 WeeksUSD1350Biochemistry, Genetics and Molecular Biology-Biotechnology
4.2%
点击查看自引率趋势图>
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
100.00%99.74%1.01%
CiteScore：5.00
SJR：0.519
SNIP：1.142
学科类别分区排名百分位
大类：Engineering
小类：Electrical and Electronic Engineering
Q2
295 / 970
大类：Engineering
小类：Electronic, Optical and Magnetic Materials
Q2
112 / 305
大类：Engineering
小类：Biotechnology
Q2
142 / 314

期刊高被引文献

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2928830
Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2907314
Impact of the Stacking Order of HfOx and AlOx Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915975
Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915097
Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2902653
Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2923204
Hybrid Systems-in-Foil—Combining the Merits of Thin Chips and of Large-Area Electronics
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2896188
A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2916399
Controlling the Surface Properties of an Inkjet-Printed Reactive Oxygen Species Scavenger for Flexible Bioelectronics Applications in Neural Resilience
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2910748
A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2900202
Accurate Graphene-Metal Junction Characterization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2891516
Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2948648
Compact Charge Modeling of Double-Gate MOSFETs Considering the Density-Gradient Equation
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2903854
Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935319
A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2946383
TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2916619
A Capacitive Information-Based Force-Voltage Responsivity Stabilization Method for Piezoelectric Touch Panels
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2939912
InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2928471
Skyrmion-Induced Memristive Magnetic Tunnel Junction for Ternary Neural Network
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2913637
A 4410-ppi Resolution Pixel Circuit for High Luminance Uniformity of OLEDoS Microdisplays
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935766
Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2939884
Ultra-High-Image-Density, Large-Size Organic Light-Emitting Device Panels Based on Highly Reliable Gate Driver Circuits Integrated by Using InGaZnO Thin-Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947557
IGZO TFT Gate Driver Circuit With Improved Output Pulse
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2018.2884920
Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2931757
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2930630
Simulation-Based Model of Randomly Distributed Large-Area Field Electron Emitters
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2940086
Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947246
A Compensation Method for Variations in Subthreshold Slope and Threshold Voltage of Thin-Film Transistors for AMOLED Displays
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2904852
Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2943017
A Method for Obtaining the Real Off-State Breakdown Voltage of AlGaN/GaN MIS-HEMTs in On-Wafer Tests by Optimizing Protective Layer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935323
A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947695
A Low-Power Thin-Film Si Heterojunction FET Noise Amplifier for Generation of True Random Numbers
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2902183
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915250
Heterogeneous System Level Integration Using Active Si Interposer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2940619
A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2949564
Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2942381
Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2937142
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2919424
Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2952150
Test System for Thin Film Transistor Parameter Extraction in Active Matrix Backplanes
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2922000
Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2897167
Foreword Special Section on Flexible Electronics From the Selected Extended Papers Presented at 2018 IFETC
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2932214
Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2906834
Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2914931
Monitoring of FinFET Characteristics Using $\\Delta V_{\\text{DIBLSS}}/(I_{\\text{on}}/I_{\\text{off}})$ and $\\Delta V_{\\text{DIBL}}/(I_{\\text{on}}/I_{\\text{off}})$
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2898697
Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2898674
Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2948254
Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2920631
Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2920024
Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2931015

相关文章

Materials Today Bio解析：IF=8.7，8天初审
2025-11-25
《ZEITSCHRIFT FUR GEBURTSHILFE UND NEONATOLOGIE》德国老牌产科期刊免版面费、非预警，毕业保底首选！
2025-11-25
Journal of Multidisciplinary Healthcare：IF= 2.4，中科院3区，JCR Q2，多学科综合医学开放获取期刊，应用性强，审稿迅速，编辑反馈专业！
2025-10-15
European Journal of Medical Genetics：IF= 1.7，中科院4区，JCR Q3，医学遗传学期刊，涵盖分子遗传学、临床基因诊断与罕见病研究，欧洲地区影响力较稳，国际传播适中！
2025-10-15
ANNALS OF ONCOLOGY：中科院1区，肿瘤学，接受率为25%
2025-10-15
Journal of Cystic Fibrosis：权威官方背景，高影响力，整体周期约 3 个月，部分 1 天录用
2025-10-15
JOURNAL OF INHERITED METABOLIC DISEASE：影响因子平稳，学术认可度高，年发文稳定，4个月录用
2025-10-15
JOURNAL OF OCCUPATIONAL AND ENVIRONMENTAL HYGIENE：自引风险小，审稿周期短，发表难度低，但if持续下降
2025-10-15
Neurobiology of Stress：中科院 2 区，认可度高，国人发文第二，机会公平
2025-10-15
NATURE REVIEWS DRUG DISCOVERY：中科院1区，生物工程与应用微生物，药学，接受率为21%
2025-10-15

期刊推荐

ACTA MECHANICA封面

ACTA MECHANICA

学科领域：工程技术
影响因子：2.9
中科院分区： 3区
ADVANCES IN STRUCTURAL ENGINEERING封面

ADVANCES IN STRUCTURAL ENGINEERING

学科领域：工程技术
影响因子：2.6
中科院分区： 3区
AI EDAM-ARTIFICIAL INTELLIGENCE FOR ENGINEERING DESIGN ANALYSIS AND MANUFACTURING封面

AI EDAM-ARTIFICIAL INTELLIGENCE FOR ENGINEERING DESIGN ANALYSIS AND MANUFACTURING

学科领域：工程技术
影响因子：2.3
中科院分区： 3区
AIAA JOURNAL封面

AIAA JOURNAL

学科领域：工程技术
影响因子：2.8
中科院分区： 3区
论文发表 2-4个月录用 7500+文章录用 不成功可退款
新
2026年3月发布（新锐分区）
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
否
N/A
2025年3月升级版
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
否
否
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
否
否