APL Materials
ISSN:2166-532X

APL Materials

APL MATER
学科领域:材料科学
是否预警:不在预警名单内
是否OA:
录用周期:10 Weeks
新锐分区:材料科学3区
年发文量:345
影响因子:4.5
JCR分区:Q2

基本信息

APL材料的特点是对材料科学领域内的重大话题进行原创性的实验研究。为了突出材料科学前沿的研究,强调工作的质量和及时性。除了定期发表的文章外,该杂志还出版专题,报道材料科学的前沿领域,如钙钛矿太阳能电池、二维材料和超越锂离子电池。
2166-532XSCIE/Scopus收录/DOAJ开放期刊
4.5
4.3
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
材料科学3区
NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
3区
PHYSICS, APPLIED 物理:应用
3区
N/A
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q2
169/461
学科:NANOSCIENCE & NANOTECHNOLOGY
SCIE
Q2
65/147
学科:PHYSICS, APPLIED
SCIE
Q2
53/187
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q2
159/463
学科:NANOSCIENCE & NANOTECHNOLOGY
SCIE
Q2
54/147
学科:PHYSICS, APPLIED
SCIE
Q2
56/187
42
345
14%-10 WeeksUSD2200NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
6.7%
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
93.33%99.29%1.32%
CiteScore:7.90
SJR:1.124
SNIP:1.250
学科类别分区排名百分位
大类:Engineering
小类:General Engineering
Q1
44 / 344
大类:Engineering
小类:General Materials Science
Q1
105 / 460

期刊高被引文献

Verification and mitigation of ion migration in perovskite solar cells
来源期刊:APL MaterialsDOI:10.1063/1.5085643
From flexible electronics technology in the era of IoT and artificial intelligence toward future implanted body sensor networks
来源期刊:APL MaterialsDOI:10.1063/1.5063498
Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3
来源期刊:APL MaterialsDOI:10.1063/1.5054606
Electrolyte-gated magnetoelectric actuation: Phenomenology, materials, mechanisms, and prospective applications
来源期刊:APL MaterialsDOI:10.1063/1.5080284
Temperature-dependent studies of exciton binding energy and phase-transition suppression in (Cs,FA,MA)Pb(I,Br)3 perovskites
来源期刊:APL MaterialsDOI:10.1063/1.5083792
Exploiting the switching dynamics of HfO 2 -based ReRAM devices for reliable analog memristive behavior
来源期刊:APL MaterialsDOI:10.1063/1.5108654
Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
来源期刊:APL MaterialsDOI:10.1063/1.5109090
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
来源期刊:APL MaterialsDOI:10.1063/1.5053867
Polarization controlled photovoltaic and self-powered photodetector characteristics in Pb-free ferroelectric thin film
来源期刊:APL MaterialsDOI:10.1063/1.5064454
Atomic layer deposition of functional multicomponent oxides
来源期刊:APL MaterialsDOI:10.1063/1.5113656
Vertically aligned carbon nanotube arrays as a thermal interface material
来源期刊:APL MaterialsDOI:10.1063/1.5083868
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters
来源期刊:APL MaterialsDOI:10.1063/1.5054713
Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride
来源期刊:APL MaterialsDOI:10.1063/1.5087836
Hardware implementation of RRAM based binarized neural networks
来源期刊:APL MaterialsDOI:10.1063/1.5116863
Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films
来源期刊:APL MaterialsDOI:10.1063/1.5049586
Structure and binding in halide perovskites: Analysis of static and dynamic effects from dispersion-corrected density functional theory
来源期刊:APL MaterialsDOI:10.1063/1.5086541
Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)
来源期刊:APL MaterialsDOI:10.1063/1.5123396
Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor
来源期刊:APL MaterialsDOI:10.1063/1.5091735
High temperature synthesis and characterization of ultrathin tellurium nanostructures
来源期刊:APL MaterialsDOI:10.1063/1.5109899
Microstructured electrodes supported on serpentine interconnects for stretchable electronics
来源期刊:APL MaterialsDOI:10.1063/1.5085160
Polydimethylsiloxane (PDMS) irreversible bonding to untreated plastics and metals for microfluidics applications
来源期刊:APL MaterialsDOI:10.1063/1.5070136
Inorganic halide perovskite materials and solar cells
来源期刊:APL MaterialsDOI:10.1063/1.5117306
Hydration of mixed halide perovskites investigated by Fourier transform infrared spectroscopy
来源期刊:APL MaterialsDOI:10.1063/1.5087914
Reactive intercalation and oxidation at the buried graphene-germanium interface
来源期刊:APL MaterialsDOI:10.1063/1.5098351
Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films
来源期刊:APL MaterialsDOI:10.1063/1.5084791
Apparent auxetic to non-auxetic crossover driven by Co2+ redistribution in CoFe2O4 thin films
来源期刊:APL MaterialsDOI:10.1063/1.5087559
A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
来源期刊:APL MaterialsDOI:10.1063/1.5074181
Toward CMOS like devices from two-dimensional channel materials
来源期刊:APL MaterialsDOI:10.1063/1.5115147
Perovskite semiconductors for next generation optoelectronic applications
来源期刊:APL MaterialsDOI:10.1063/1.5119744
CdSe/CdS–poly(cyclohexylethylene) thin film luminescent solar concentrators
来源期刊:APL MaterialsDOI:10.1063/1.5121441
Novel inorganic materials generated by aliovalent anion substitution
来源期刊:APL MaterialsDOI:10.1063/1.5115100
Engineering the magnetic order in epitaxially strained Sr1−xBaxMnO3 perovskite thin films
来源期刊:APL MaterialsDOI:10.1063/1.5090824
Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy
来源期刊:APL MaterialsDOI:10.1063/1.5121445
Determining interface structures in vertically aligned nanocomposite films
来源期刊:APL MaterialsDOI:10.1063/1.5099204
NH2-UiO-66/g-C3N4/CdTe composites for photocatalytic CO2 reduction under visible light
来源期刊:APL MaterialsDOI:10.1063/1.5120528
Pushing the limit of Cs incorporation into FAPbBr 3 perovskite to enhance solar cells performances
来源期刊:APL MaterialsDOI:10.1063/1.5087246
Highly charged interface trap states in PbS1−x govern electro-thermal transport
来源期刊:APL MaterialsDOI:10.1063/1.5096786
Electrochemical memristive devices based on submonolayer metal deposition
来源期刊:APL MaterialsDOI:10.1063/1.5110889
Analysis by synchrotron X-ray scattering of the kinetics of formation of an Fe-based metal-organic framework with high CO2 adsorption
来源期刊:APL MaterialsDOI:10.1063/1.5121644
Band engineering, carrier density control, and enhanced thermoelectric performance in multi-doped SnTe
来源期刊:APL MaterialsDOI:10.1063/1.5116882
Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy
来源期刊:APL MaterialsDOI:10.1063/1.5125809
Preparation and uses of large area single crystal metal foils
来源期刊:APL MaterialsDOI:10.1063/1.5114861
Thin-film stabilization of LiNbO3-type ZnSnO3 and MgSnO3 by molecular-beam epitaxy
来源期刊:APL MaterialsDOI:10.1063/1.5054289
Thermoelectric transport at F4TCNQ–silicon interface
来源期刊:APL MaterialsDOI:10.1063/1.5050537
Size-controlled, high optical quality ZnO nanowires grown using colloidal Au nanoparticles and ultra-small cluster catalysts
来源期刊:APL MaterialsDOI:10.1063/1.5054355
Hole-transport comparison between solution-processed and vacuum-deposited organic semiconductors
来源期刊:APL MaterialsDOI:10.1063/1.5058686
Confined polaronic transport in (LaFeO3)n/(SrFeO3)1 superlattices
来源期刊:APL MaterialsDOI:10.1063/1.5110190
Tuning antiferromagnetic interlayer exchange coupling in La0.67Ca0.33MnO3-based synthetic antiferromagnets
来源期刊:APL MaterialsDOI:10.1063/1.5087570
Probing energy landscapes in multilayer heterostructures: Challenges and opportunities
来源期刊:APL MaterialsDOI:10.1063/1.5129155
In operando studies of CO oxidation on epitaxial SrCoO2.5+δ thin films
来源期刊:APL MaterialsDOI:10.1063/1.5108957

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