Advanced Electronic Materials
ISSN:2199-160X

Advanced Electronic Materials

ADV ELECTRON MATER
学科领域:材料科学
是否预警:不在预警名单内
是否OA:
录用周期:10 Weeks
新锐分区:材料科学3区
年发文量:442
影响因子:5.3
JCR分区:Q1

基本信息

先进电子材料是一个跨学科的论坛,为同行评审,高质量,高影响力的研究领域的材料科学,物理和工程的电子和磁性材料。除了基础研究外,它还包括电子和磁性材料的物理和物理性质、自旋电子学、电子学、器件物理和工程、微机电系统和纳米机电系统以及有机电子学的研究。
2199-160XSCIE/Scopus收录/DOAJ开放期刊
5.3
5.5
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
材料科学3区
NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
3区
PHYSICS, APPLIED 物理:应用
2区
N/A
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q2
140/461
学科:NANOSCIENCE & NANOTECHNOLOGY
SCIE
Q2
52/147
学科:PHYSICS, APPLIED
SCIE
Q1
43/187
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q2
148/463
学科:NANOSCIENCE & NANOTECHNOLOGY
SCIE
Q2
51/147
学科:PHYSICS, APPLIED
SCIE
Q2
53/187
33
442
32%-10 Weeks-NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
3.8%
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
92.99%80.1%0.55%
CiteScore:10.70
SJR:1.478
SNIP:1.241
学科类别分区排名百分位
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
Q1
38 / 305

期刊高被引文献

Dual‐Functional Graphene Composites for Electromagnetic Shielding and Thermal Management
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800558
The Thermoelectric Properties of Bismuth Telluride
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800904
The Recent Advance in Fiber‐Shaped Energy Storage Devices
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800456
Poly(3,4‐ethylenedioxythiophene): Chemical Synthesis, Transport Properties, and Thermoelectric Devices
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800918
Mechanisms for enhanced state retention and stability in redox-gated organic neuromorphic devices
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800686
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900008
Sub 10 nm Bilayer Bi2O2Se Transistors
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800720
Conjugated Polymer Blends for Organic Thermoelectrics
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800821
Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900044
Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800707
Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800723
Recent Advances in Black Phosphorus‐Based Electronic Devices
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800666
Dual-Gate Organic Field-Effect Transistor for pH Sensors with Tunable Sensitivity
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800381
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900393
Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900249
Large-Area All-Printed Temperature Sensing Surfaces Using Novel Composite Thermistor Materials
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800605
Recent Advances in n‐Type Thermoelectric Nanocomposites
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800943
Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900215
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800745
High‐Performance Organic Thermoelectric Materials: Theoretical Insights and Computational Design
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800882
Design of Mixed‐Cation Tri‐Layered Pb‐Free Halide Perovskites for Optoelectronic Applications
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900234
Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900458
The Vacancy‐Induced Electronic Structure of the SrTiO3−δ Surface
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800460
Photovoltaic-Pyroelectric-Piezoelectric Coupled Effect Induced Electricity for Self-Powered Coupled Sensing
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900195
Reversible Modification of Ferromagnetism through Electrically Controlled Morphology
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201900150
Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800985
Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi2Te2.7Se0.3/Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201900786
Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201800591
Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800407
Spin-Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe2 in Non-Local Transport Measurements
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201900334
Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900318
The Effect of Electrostatic Interaction on n‐Type Doping Efficiency of Fullerene Derivatives
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800959
Development of VO2‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800949
Near‐Infrared Photoresponse of Waveguide‐Integrated Carbon Nanotube–Silicon Junctions
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800265
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201901171
EGOFET Gated by a Molecular Electronic Switch: A Single‐Device Memory Cell
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800875
Investigation of the Eightwise Switching Mechanism and Its Suppression in SrTiO3 Modulated by Humidity and Interchanged Top and Bottom Platinum and LaNiO3 Electrode Contacts
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800566
Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800863
Flexible Asymmetric Microsupercapacitors from Freestanding Hollow Nickel Microfiber Electrodes
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800584
In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201900605
Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800711
Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type-II Weyl Semimetal NbIrTe4
来源期刊:Advanced electronic materialsDOI:10.1002/aelm.201900250
Tailoring the Local Conductivity of TiO2 by X‐Ray Nanobeam Irradiation
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900129
Directed Assembly of Nanoparticle Threshold Selector Arrays
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900098
Perspectives of Unicolored Phosphor‐Sensitized Fluorescence
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201900646
Nonvolatile Electric‐Field Control of Ferromagnetic Resonance and Spin Pumping in Pt/YIG at Room Temperature
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800663
Constructing Metal Arch Nanobridges Utilizing a Photothermal‐Induced Nanobonding Technique
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800807
Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800695
Solution‐Processed InAs Nanowire Transistors as Microwave Switches
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800323
Efficient Activation of Nanomechanical Resonators
来源期刊:Advanced electronic materialsDOI:10.1002/AELM.201800356

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