SOLID-STATE ELECTRONICS
ISSN:0038-1101

SOLID-STATE ELECTRONICS

SOLID STATE ELECTRON
学科领域:物理与天体物理
是否预警:不在预警名单内
是否OA:
录用周期:一般,3-6周
新锐分区:物理与天体物理4区
年发文量:112
影响因子:1.4
JCR分区:Q4

基本信息

这是本杂志的目的是汇集在一个出版物的优秀论文报告新的和原创的工作在以下领域:(1)固体物理学和技术在电子学和光电子学中的应用,包括理论和器件设计;(2)器件的光学、电学、形态学表征技术和参数提取;(3)半导体器件的制造,以及器件相关材料的生长、测量和评价;(4)亚微米和纳米级微电子和光电子器件的物理学和建模,包括加工、测量和性能评估;(5)数值方法在固态器件和工艺的建模和模拟中的应用;以及(6)基于半导体和替代电子材料的纳米级电子和光电子器件、光伏器件、传感器和MEMS;(7)新型器件材料的合成和电光性能。
0038-1101SCIE/Scopus收录
1.4
1.3
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
物理与天体物理4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区
PHYSICS, APPLIED 物理:应用
4区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区
N/A
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q4
277/368
学科:PHYSICS, APPLIED
SCIE
Q4
146/187
学科:PHYSICS, CONDENSED MATTER
SCIE
Q4
63/80
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q4
285/368
学科:PHYSICS, APPLIED
SCIE
Q4
149/187
学科:PHYSICS, CONDENSED MATTER
SCIE
Q3
58/80
87
112
16%容易一般,3-6周-物理-工程:电子与电气
7.1%
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
100.00%13.67%0.63%
CiteScore:3.10
SJR:0.352
SNIP:0.620
学科类别分区排名百分位
大类:Engineering
小类:Electrical and Electronic Engineering
Q2
444 / 970
大类:Engineering
小类:Condensed Matter Physics
Q3
249 / 443
大类:Engineering
小类:Electronic, Optical and Magnetic Materials
Q3
172 / 305
大类:Engineering
小类:Materials Chemistry
Q3
190 / 324

期刊高被引文献

Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.010
A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.035
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.006
NanoElectronics Roadmap for Europe: From Nanodevices and Innovative Materials to System Integration
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.014
Feasibility of plasmonic circuits for on-chip interconnects
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.066
Degradation and failure mechanism of AlGaN-based UVC-LEDs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.01.004
Exploiting topological matter for Majorana physics and devices
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.005
Impact of threshold voltage extraction methods on semiconductor device variability
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.055
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.018
Bias-stress effects in diF-TES-ADT field-effect transistors
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.014
Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.027
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.045
Investigation of Mo:Na and Mo related back contacts for the application in Cu(In,Ga)Se2 thin film solar cells
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.04.002
Multifactor lithographic process conditions of 3D single mode waveguide fabrication
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.004
Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.05.012
Island diodes triggering SCR in waffle layout with high failure current for HV ESD protection
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.001
Quantum modeling of threshold voltage in Ge dual material gate (DMG) FinFET
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.047
Experimental analysis and improvement of the DC method for self-heating estimation
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.056
Modeling of MEMS microwave integrated detector applied to 8–12 GHz receiver
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.107626
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.041
Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.02.002
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.025
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.003
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.01.003
Analysis and optimization of the switching noise for Super-junction MOSFET in full bridge converter system
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.107638
Silicon-based high-integration reconfigurable dipole with SPiN
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.02.005

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