Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.010
A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.035
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.006
NanoElectronics Roadmap for Europe: From Nanodevices and Innovative Materials to System Integration
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.014
Feasibility of plasmonic circuits for on-chip interconnects
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.066
Degradation and failure mechanism of AlGaN-based UVC-LEDs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.01.004
Exploiting topological matter for Majorana physics and devices
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.005
Impact of threshold voltage extraction methods on semiconductor device variability
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.055
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.018
Bias-stress effects in diF-TES-ADT field-effect transistors
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.014
Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.027
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.045
Investigation of Mo:Na and Mo related back contacts for the application in Cu(In,Ga)Se2 thin film solar cells
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.04.002
Multifactor lithographic process conditions of 3D single mode waveguide fabrication
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.12.004
Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.05.012
Island diodes triggering SCR in waffle layout with high failure current for HV ESD protection
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.001
Quantum modeling of threshold voltage in Ge dual material gate (DMG) FinFET
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.047
Experimental analysis and improvement of the DC method for self-heating estimation
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.056
Modeling of MEMS microwave integrated detector applied to 8–12 GHz receiver
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.107626
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.041
Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.02.002
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.03.025
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2018.11.003
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.01.003
Analysis and optimization of the switching noise for Super-junction MOSFET in full bridge converter system
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.107638
Silicon-based high-integration reconfigurable dipole with SPiN
来源期刊:Solid-state ElectronicsDOI:10.1016/J.SSE.2019.02.005