Hydrogen Desorption from Pentagraphane
来源期刊:SemiconductorsDOI:10.1134/S106378261905021X
Microstructure and Optical Bandgap of Cobalt Selenide Nanofilms
来源期刊:SemiconductorsDOI:10.1134/s1063782619130074
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities
来源期刊:SemiconductorsDOI:10.1134/S1063782619040213
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
来源期刊:SemiconductorsDOI:10.1134/S1063782619080189
Formation of Porous Silicon by Nanopowder Sintering
来源期刊:SemiconductorsDOI:10.1134/S1063782619040031
Features of the Properties of Rare-Earth Semiconductors
来源期刊:SemiconductorsDOI:10.1134/S106378261902012X
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films
来源期刊:SemiconductorsDOI:10.1134/S1063782619010056
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors
来源期刊:SemiconductorsDOI:10.1134/s1063782619160139
Low-Temperature Annealing of Lightly Doped n -4 H -SiC Layers after Irradiation with Fast Electrons
来源期刊:SemiconductorsDOI:10.1134/S1063782619070133
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium
来源期刊:SemiconductorsDOI:10.1134/S1063782619010020
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides
来源期刊:SemiconductorsDOI:10.1134/S1063782619050130
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes
来源期刊:SemiconductorsDOI:10.1134/S1063782619040080
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements
来源期刊:SemiconductorsDOI:10.1134/S1063782619010081
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers
来源期刊:SemiconductorsDOI:10.1134/s1063782619120078
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
来源期刊:SemiconductorsDOI:10.1134/S1063782619070224
Ab Initio Study of Absorption Resonance Correlations between Nanotubes and Nanoribbons of Graphene and Hexagonal Boron Nitride
来源期刊:SemiconductorsDOI:10.1134/s1063782619140161
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
来源期刊:SemiconductorsDOI:10.1134/S1063782619020234
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes
来源期刊:SemiconductorsDOI:10.1134/s1063782619090173
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy
来源期刊:SemiconductorsDOI:10.1134/S1063782619040092
Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It
来源期刊:SemiconductorsDOI:10.1134/S1063782619060149
New Direction in the Application of Thermoelectric Energy Converters
来源期刊:SemiconductorsDOI:10.1134/S1063782619070066
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
来源期刊:SemiconductorsDOI:10.1134/s1063782619110058
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
来源期刊:SemiconductorsDOI:10.1134/s1063782619160140
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions
来源期刊:SemiconductorsDOI:10.1134/s1063782619120121
Laser Annealing of Thin ITO Films on Flexible Organic Substrates
来源期刊:SemiconductorsDOI:10.1134/S1063782619020192
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
来源期刊:SemiconductorsDOI:10.1134/S1063782619040043
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
来源期刊:SemiconductorsDOI:10.1134/s1063782619110046
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon
来源期刊:SemiconductorsDOI:10.1134/S1063782619030175
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
来源期刊:SemiconductorsDOI:10.1134/S106378261906006X
Electronic States in Cylindrical Core-Multi-Shell Nanowire
来源期刊:SemiconductorsDOI:10.1134/S1063782619120236
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers
来源期刊:SemiconductorsDOI:10.1134/s106378261910004x
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion
来源期刊:SemiconductorsDOI:10.1134/s1063782619090094
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
来源期刊:SemiconductorsDOI:10.1134/s1063782619090288
Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas
来源期刊:SemiconductorsDOI:10.1134/S1063782619040146
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound
来源期刊:SemiconductorsDOI:10.1134/S1063782619050300
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
来源期刊:SemiconductorsDOI:10.1134/S106378261906023X
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn
来源期刊:SemiconductorsDOI:10.1134/S1063782619060253
Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si
来源期刊:SemiconductorsDOI:10.1134/S1063782619060289
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode
来源期刊:SemiconductorsDOI:10.1134/S1063782619050178
Vertical Field-Effect Transistor with a Controlling GaAs-Based p – n Junction
来源期刊:SemiconductorsDOI:10.1134/s1063782619100245
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential
来源期刊:SemiconductorsDOI:10.1134/s1063782619120108
Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption
来源期刊:SemiconductorsDOI:10.1134/S1063782619060137
Thermoelectric Properties of In0.2Ce0.1Co4Sb12.3 Ribbons Prepared by the Rapid-Quenching Technique
来源期刊:SemiconductorsDOI:10.1134/S1063782619050208
Electronic and Optical Properties of Perovskite Quantum-Dot Dimer
来源期刊:SemiconductorsDOI:10.1134/s1063782619120303
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity
来源期刊:SemiconductorsDOI:10.1134/s1063782619140197
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range
来源期刊:SemiconductorsDOI:10.1134/s1063782619130165
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation
来源期刊:SemiconductorsDOI:10.1134/S1063782619070145
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis
来源期刊:SemiconductorsDOI:10.1134/S1063782619010111
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters
来源期刊:SemiconductorsDOI:10.1134/S1063782619010160
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
来源期刊:SemiconductorsDOI:10.1134/s1063782619100178