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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN：0268-1242

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

SEMICOND SCI TECH
学科领域：工程技术
是否预警：不在预警名单内
是否OA：否
录用周期：一般,3-6周
新锐分区：工程技术4区
年发文量：206
影响因子：2.1
JCR分区：Q3

基本信息

《半导体科学与技术》致力于半导体研究，其多学科方法反映了这一主题的深远性质。该杂志的范围涵盖非有机、有机和氧化物半导体及其界面和器件的基础和应用实验和理论研究，包括：基本性质材料和纳米结构器件和应用制造和加工新的分析技术模拟新兴领域：量子技术的材料和器件混合结构和器件二维和拓扑材料超材料能量柔性电子学的半导体。
0268-1242SCIE/Scopus收录
2.1
点击查看最新影响趋势>
2
新
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
3区
否
N/A
新
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q3
214/368
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q3
318/461
学科：PHYSICS, CONDENSED MATTER
SCIE
Q3
50/80
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q3
247/368
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q3
310/463
学科：PHYSICS, CONDENSED MATTER
SCIE
Q3
46/80
99
206
点击查看年发文量趋势图>
19%0一般,3-6周-工程技术-材料科学：综合
4.8%
点击查看自引率趋势图>
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
97.09%34.7%0.26%
CiteScore：4.20
SJR：0.405
SNIP：0.775
学科类别分区排名百分位
大类：Engineering
小类：Electrical and Electronic Engineering
Q2
347 / 970
大类：Engineering
小类：Condensed Matter Physics
Q2
179 / 443
大类：Engineering
小类：Electronic, Optical and Magnetic Materials
Q2
143 / 305
大类：Engineering
小类：Materials Chemistry
Q2
155 / 324

期刊高被引文献

Molecular beam epitaxy growth of AlAs1−x Bi x
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AACF38
Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB2C09
Emergence of high quality sputtered III-nitride semiconductors and devices
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB3374
Characteristics of Al 2 O 3 /native oxide/n-GaN capacitors by post-metallization annealing
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAFDBD
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB0761
Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB3071
Multi-layer elemental 2D materials: antimonene, germanene and stanene grown directly on molybdenum disulfides
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB3C8A
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB2C1A
High detectivity ITO/organolead halide perovskite Schottky photodiodes
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB075D
InSb nanowires for multispectral infrared detection
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB0476
Thermal annealing effects on the electrophysical characteristics of sputtered MoS2 thin films by Hall effect measurements
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB09A5
A hot-carrier assisted InAs/AlGaAs quantum-dot intermediate-band solar cell
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB23D0
Bandgap bowing in crystalline (ZnO)1−x (GaN) x thin films; influence of composition and structural properties
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAEE4A
XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAEF9F
Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1BF8
Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAFCCD
Thermoelectric and electronic properties of chromium substituted tetrahedrite
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAFA31
Regimes of current transport mechanisms in CdS/CdTe solar cells
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB23B5
Combined STEM-EDS tomography of nanowire structures
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab4840
Characterization of a GaAs/GaAsBi pin solar cell
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB23AB
High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB110B
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab4b01
Control of complex quantum structures in droplet epitaxy
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB337E
Dual direction SCR with deep well structure for high voltage ESD in communication bus
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB276E
Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB315D
Multi-pulse Characterization of Trapping/Detrapping Mechanisms in AlGaN/GaN High Electromobility Transistors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab3fe8
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB118F
Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB22EB
Triple-sided charged plasma symmetric lateral bipolar transistor on SiGe-OI
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB10F2
Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAF621
Photosensitive Sb-n-InSb Schottky barrier diodes
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB0A41
a-Si:H TFT-based gate driver circuit using Q node as both pull-up and hold-down controller
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1FA6
Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB3C02
Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab4b93
Dielectric based charge carrier tuning for CNT CMOS inverters
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAF17D
Improvement of NbO x -based threshold switching devices by implementing multilayer stacks
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1DA3
Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab4a29
Anisotropic lateral oxidation of Al-III–V semiconductors: inverse problem and circular aperture fabrication
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAF2F1
PECVD grown silicon nitride ultra-thin films for CNTFETs
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1D31
Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB157D
A polarization-induced InN-based tunnel FET without physical doping
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1F9C
On the predictive, quantitative properties of the amphoteric native defect model
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab40e7
Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB2481
Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAFCCC
Improving extraction efficiency of OLEDs by a luminescent polymer embedded in a colloidal crystal matrix
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB1A9A
Effects of sacrificial oxidation on surface properties of n- and p-type 4H-SiC: implications for metal contact behaviors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AAEC45
Mixed states of exciton condensation in two dimensional semiconductors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB063A
Effect of HCl cleaning on InSb–Al2O3 MOS capacitors
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB0331
Realization of GaN-based gain-guided blue laser diodes by helium ion implantation
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/ab429c
Phoniton in a GaAs-AlAs acoustic phonon cavity with a tunable two-level system
来源期刊：Semiconductor Science and TechnologyDOI：10.1088/1361-6641/AB20F5

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AATCC REVIEW封面

AATCC REVIEW

学科领域：工程技术
影响因子：0.7
中科院分区： 4区
ACCREDITATION AND QUALITY ASSURANCE封面

ACCREDITATION AND QUALITY ASSURANCE

学科领域：工程技术
影响因子：1
中科院分区： 4区
ACI MATERIALS JOURNAL封面

ACI MATERIALS JOURNAL

学科领域：工程技术
影响因子：1.6
中科院分区： 4区
ACI STRUCTURAL JOURNAL封面

ACI STRUCTURAL JOURNAL

学科领域：工程技术
影响因子：1.5
中科院分区： 4区
论文发表 2-4个月录用 7500+文章录用 不成功可退款
新
2026年3月发布
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
3区
否
N/A
2025年3月升级版
大类学科小类学科Top期刊综述期刊
工程技术4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
否
否
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
4区
否
否