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JOURNAL OF CRYSTAL GROWTH
ISSN：0022-0248

JOURNAL OF CRYSTAL GROWTH

J CRYST GROWTH
学科领域：材料科学
是否预警：不在预警名单内
是否OA：否
录用周期：约2.6个月
新锐分区：材料科学3区
年发文量：298
影响因子：2
JCR分区：Q2

基本信息

该杂志为从事晶体生长及其应用（如器件）的实验和理论方面研究的工作者提供了共同的参考和出版来源。实验和理论贡献发表在以下领域：成核和生长理论、分子动力学和输运现象、粘性介质如聚合物和玻璃中的结晶;金属、矿物、半导体、超导体、磁性材料、无机、有机和生物物质的块状或薄膜晶体生长;分子束外延、化学气相沉积、III-V和II-VI等半导体的生长;通过物理和化学方法表征单晶;用于晶体生长的设备、仪器和技术以及纯化方法;多层异质结构及其表征，重点是电子材料的晶体生长和外延方面。该杂志的一个特色是定期刊登有关晶体生长的专题讨论会和会议的论文。
0022-0248SCIE/Scopus收录
2
点击查看最新影响趋势>
2.3
新
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
材料科学3区
CRYSTALLOGRAPHY 晶体学
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, APPLIED 物理：应用
4区
否
N/A
新
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科：CRYSTALLOGRAPHY
SCIE
Q2
15/31
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q3
325/461
学科：PHYSICS, APPLIED
SCIE
Q3
130/187
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科：CRYSTALLOGRAPHY
SCIE
Q2
15/31
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY
SCIE
Q3
252/463
学科：PHYSICS, APPLIED
SCIE
Q3
96/187
136
298
点击查看年发文量趋势图>
24%0约2.6个月-化学-晶体学
10%
点击查看自引率趋势图>
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
98.66%7.52%-
CiteScore：3.60
SJR：0.424
SNIP：0.837
学科类别分区排名百分位
大类：Physics and Astronomy
小类：Condensed Matter Physics
Q3
223 / 443
大类：Physics and Astronomy
小类：Materials Chemistry
Q3
177 / 324
大类：Physics and Astronomy
小类：Inorganic Chemistry
Q3
47 / 81

期刊高被引文献

Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.013
Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.049
Initial stages of the epitaxial growth of AlN on GaN (1 1 1)-(2 × 2) surface: Ab-initio studies
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.12.008
Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.12.036
Magnetic properties of high-pressure optical floating-zone grown LaNiO3 single crystals
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125157
Role of reducing agent and self-sacrificed copper-thiourea complex in the synthesis of precisely controlled Cu2−xS microtubes
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.011
Revealing influence mechanism of a transverse static magnetic field on the refinement of primary dendrite spacing during directional solidification
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.04.010
Room-temperature epitaxy of metal thin films on tungsten diselenide
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.09.040
Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.03.017
Optimization of the controlling recipe in quasi-single crystalline silicon growth using artificial neural network and genetic algorithm
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.06.033
An investigation of the wetting behavior of heat-treated silicon nitride particles with liquid silicon
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.03.013
Analogy between growth of crystals and ferroelectric domains. Application of Wulff construction
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125236
Bolometric molybdate crystals grown by low-thermal-gradient Czochralski technique
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.06.030
Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.031
Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125248
Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.06.010
Influence of crystal orientation and surface termination on the growth of BiSb thin films on GaAs substrates
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.01.041
Microstructure and influence of buffer layer on threading dislocations in (0 0 0 1) AlN/sapphire grown by hydride vapor phase epitaxy
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.03.012
Development of high power SiC devices for rail traction power systems
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.037
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.035
Preparation of dispersed metal nanoparticles in the aqueous solution of metal carboxylate and the tetra-n-butylammonium carboxylate
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.056
Synthesis and characterization of lanthanum chloride doped L-alanine maleate single crystals
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.06.002
Selective-area growth of magnetic MnAs nanodisks on Si (1 1 1) substrates using multiple types of dielectric masks
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.11.015
Effect of annealing temperature on morphology and structure of CuO nanowires grown by thermal oxidation method
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.010
Effects of solvents and impurity on crystallization kinetics and crystal properties in a reactive crystallization of paracetamol
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125150
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.013
Fast forecasting of VGF crystal growth process by dynamic neural networks
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.05.022
Crystallization of dissimilar Ti/Cu/steel laser welds
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125212
Thermomigration of molten Cr-Si-C alloy in 4H-SiC at 1873-2273 K
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.04.022
The effect of undercooling on growth velocity and microstructure of Ni95Cu5 alloys
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.051
Float-zone growth of silicon crystals using large-area seeding
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.061
GaN crystals growth in the Na-Li-Ca flux by liquid phase epitaxy (LPE) technique
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.05.010
Shape changes of two-dimensional atomic islands and vacancy clusters diffusing on epitaxial (1 1 1) interfaces under the impact of an external force
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.05.016
Growth and spectral-luminescence characteristics of modified BGO crystals
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125205
Thermal analysis and crystal growth of doped Nb2O5
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2018.12.035
Quantum chemical study on nanoparticles formation mechanism in AlGaN MOCVD growth
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125201
Crystallisation of copper sulphate pentahydrate from aqueous solution in absence and presence of sodium chloride
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125204
Growth and fluorescence characteristics of Er:LuAG laser crystals
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.11.037
Simulation to confirm the existence of distinct low-temperature regions in a Si melt using an insulating plate under the crucible bottom for the noncontact crucible method
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.125160
InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.062
Carbon-doped MBE GaN: Spectroscopic insights
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.041
Growth of necklace-like In2Se3 nanowires using MoS2 seed layer during PVD method
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125215
Cocrystallization through the use of a salt: The case of thiourea with a new propanediammonium oxalate salt
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125267
In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.11.017
FeGa2O4 nanowires preparation after milling and annealing of Fe doped GaN samples
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125220
Reduced radial resistivity variation of FZ Si wafers with Advanced NTD
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2019.02.017
Influence of Ni on crystallization and magnetic properties of Fe72.5−xNixCu1Nb2Mo1.5Si14B9 alloys
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125256
Effect of annealing temperature on the characteristics of Pt/CH3NH3PbI3 contact
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.09.027
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy
来源期刊：Journal of Crystal GrowthDOI：10.1016/J.JCRYSGRO.2018.10.019
Using MVC pattern in the software development to simulate production of high cylindrical steel ingots
来源期刊：Journal of Crystal GrowthDOI：10.1016/j.jcrysgro.2019.125240

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学科领域：材料科学
影响因子：2.7
中科院分区： 3区
论文发表 2-4个月录用 7500+文章录用 不成功可退款
新
2026年3月发布
大类学科小类学科Top期刊综述期刊
材料科学3区
CRYSTALLOGRAPHY 晶体学
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, APPLIED 物理：应用
4区
否
N/A
2025年3月升级版
大类学科小类学科Top期刊综述期刊
材料科学4区
CRYSTALLOGRAPHY 晶体学
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, APPLIED 物理：应用
4区
否
否
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
材料科学4区
CRYSTALLOGRAPHY 晶体学
3区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合
4区
PHYSICS, APPLIED 物理：应用
4区
否
否