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IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN：0018-9383

IEEE TRANSACTIONS ON ELECTRON DEVICES

IEEE T ELECTRON DEV
学科领域：工程技术
是否预警：不在预警名单内
是否OA：否
录用周期：约4.7个月
新锐分区：工程技术3区
年发文量：1123
影响因子：3.2
JCR分区：Q2

基本信息

IEEE Transactions on Electron Devices出版有关电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性的原创性和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件以及在生物电子学、生物医学电子学、计算、通信、显示器微机电、成像、微致动器、纳米电子、光电子、光伏、功率IC和微传感器。还出版了关于这些主题的辅导和评论论文，偶尔还出版专刊，以更深入和更广泛的方式介绍一些特定领域的论文。
0018-9383SCIE/Scopus收录
3.2
点击查看最新影响趋势>
3.3
新
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
PHYSICS, APPLIED 物理：应用
3区
否
N/A
新
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q2
143/368
学科：PHYSICS, APPLIED
SCIE
Q2
71/187
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q2
149/368
学科：PHYSICS, APPLIED
SCIE
Q2
65/187
165
1123
点击查看年发文量趋势图>
22%较易约4.7个月平均 3850 元/页工程技术-工程：电子与电气
15.6%
点击查看自引率趋势图>
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
100.00%3.63%0.68%
CiteScore：6.00
SJR：0.788
SNIP：1.389
学科类别分区排名百分位
大类：Engineering
小类：Electrical and Electronic Engineering
Q1
238 / 970
大类：Engineering
小类：Electronic, Optical and Magnetic Materials
Q2
86 / 305

期刊高被引文献

Evaluation of Low-Temperature Saturation Velocity in $\\beta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2889573
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2879788
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2887270
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2878787
Convolutional Neural Networks Based on RRAM Devices for Image Recognition and Online Learning Tasks
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882779
Effective Heat Dissipation of QD-Based WLEDs by Stacking QD Film on Heat-Conducting Phosphor-Sapphire Composite
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907700
Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2899742
1T-DRAM With Shell-Doped Architecture
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882556
The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2924312
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2877905
Modeling of HCD Kinetics for Full ${V}_{{G}}$ / ${V}_{{D}}$ Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2911335
A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906293
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2894273
A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage Nanosensor
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2899756
Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2887245
A Compact Relativistic Magnetron With Lower Output Mode
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2898446
A Numerical Simulation of C 3 N Nanoribbon-Based Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2883298
Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906892
Bias Temperature Stress Instability of Multilayered MoS2 Field-Effect Transistors With CYTOP Passivation
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2904338
Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2893479
Study on Impact of Parasitic Capacitance on Performance of Graded Channel Negative Capacitance SOI FET at High Temperature
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2917775
Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907484
Three-Dimensional Varying Density Field Plate for Lateral Power Devices
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2895234
DIMOHA: A Time-Domain Algorithm for Traveling-Wave Tube Simulations
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2928450
Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2894967
Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2912426
A Proposal for an Electrostatic Doping-Assisted Electroabsorption Modulator for Intrachip Communication
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906673
Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2898255
Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906249
Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2893288
Influence of Fundamental Model Uncertainties on Silicon Solar Cell Efficiency Simulations
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882776
Spontaneous Degradation of Flexible Poly-Si TFTs Subject to Dynamic Bending Stress
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907042
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2881294
Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2866095
Efficiency Enhancement in Thermally Activated Delayed Fluorescence Organic Light-Emitting Devices by Controlling the Doping Concentration in the Emissive Layer
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2924091
Improving the Properties of L-Ascorbic Acid Biosensor Based on GO/IGZO/Al Using Magnetic Beads
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2901053
Study of Passband and Stopband Properties of Sheet-Beam Folded Waveguide Structures
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2905774
Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2925892
Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2949702
Prediction of Alpha Particle Effect on 5-nm Vertical Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2873682
Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2941710
The Impact of Temperature on GaN/Si HEMTs Under RF Operation Using Gate Resistance Thermometry
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2876207
3-D Fast Nonlinear Simulation for Beam–Wave Interaction of Sheet Beam Traveling-Wave Tube
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2889652
The Minimum Specific on-Resistance of Semi-SJ Device
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2881293
Ultrasensitive Charged Object Detection Based on Rubrene Crystal Sensor
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2914353
From Process Corners to Statistical Circuit Design Methodology: Opportunities and Challenges
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2860929
Influences of Diamond Material on Heat Dissipation Capabilities of Helical Slow Wave Structures
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2945969
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2900743
Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2934186
Parasitic $RC$ Aware Delay Corner Model for Sub-10-nm Logic Circuit Design
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882773

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影响因子：2.8
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论文发表 2-4个月录用 7500+文章录用 不成功可退款
新
2026年3月发布（新锐分区）
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
PHYSICS, APPLIED 物理：应用
3区
否
N/A
2025年3月升级版
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
PHYSICS, APPLIED 物理：应用
3区
否
否
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术2区
PHYSICS, APPLIED 物理：应用
2区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
3区
否
否