IEEE ELECTRON DEVICE LETTERS
ISSN:0741-3106

IEEE ELECTRON DEVICE LETTERS

IEEE ELECTR DEVICE L
学科领域:工程技术
是否预警:不在预警名单内
是否OA:
录用周期:约1.3个月
新锐分区:工程技术2区
年发文量:602
影响因子:4.5
JCR分区:Q2

基本信息

IEEE电子器件通讯发表与电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性相关的原创性和重要贡献,涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件以及在生物电子学、生物医学电子学、计算、通信、显示器微机电、成像、微致动器、纳米电子、光电子、光伏、功率IC和微传感器。
0741-3106SCIE/Scopus收录
4.5
4.3
2026年3月发布
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大类学科小类学科Top期刊综述期刊
工程技术2区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
3区
N/A
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q2
99/368
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q1
80/368
135
602
35%约25%约1.3个月平均 660 元/页工程技术-工程:电子与电气
11.1%
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
100.00%2.83%1.44%
CiteScore:7.60
SJR:1.150
SNIP:1.578
学科类别分区排名百分位
大类:Engineering
小类:Electrical and Electronic Engineering
Q1
160 / 970
大类:Engineering
小类:Electronic, Optical and Magnetic Materials
Q1
58 / 305

期刊高被引文献

Current Aperture Vertical $\\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2884542
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2900154
Low Power Restricted Boltzmann Machine Using Mixed-Mode Magneto-Tunneling Junctions
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2889881
Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2907063
Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2886426
Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\\mathrm{{max}}}$
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2884054
Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2919251
Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2886380
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2915555
An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2886552
Experimental Verification of the Low Transmission Loss of a Flat-Roofed Sine Waveguide Slow-Wave Structure
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2904080
A Novel Multi-Source Micro Power Generator for Harvesting Thermal and Optical Energy
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2889300
Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2885846
The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2917285
Color Converted White Light-Emitting Diodes With 637.6 MHz Modulation Bandwidth
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2884934
Impact of Dopant Aggregation on the EL of Blue Fluorescent Host-Dopant Emitters
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2908194
Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2890535
Enhancement-Mode $\\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2908948
Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2889904
A High-Performance Pd Nanoparticle (NP)/WO3 Thin-Film-Based Hydrogen Sensor
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2915537
Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2895830
Low Subthreshold Swing Double-Gate $\\beta$ -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2924680
Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2931826
3D MEMS In-Chip Solenoid Inductor With High Inductance Density for Power MEMS Device
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2941003
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2936104
RF MEMS In-Line Type Phase Detector With Large Dynamic Range
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2904340
Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2910462
Large-Signal Model of the Metal–Insulator–Graphene Diode Targeting RF Applications
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2911116
Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2950916
High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2916628
Right-Angle Black Phosphorus Tunneling Field Effect Transistor
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2946763
An Accurate Analytical Model for Tunnel FET Output Characteristics
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2914014
Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2939668
Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2943911
Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2880320
Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2937399
High-Temperature Cycle Durability of Superplastic Al–Zn Eutectoid Solder Joints With Stress Relaxation Characteristics for SiC Power Semiconductor Devices
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2884698
A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2909410
Enhanced Performance of Green Perovskite Quantum Dots Light-Emitting Diode Based on Co-Doped Polymers as Hole Transport Layer
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2932134
Triple Gate Polycrystalline-Silicon-Based Ion-Sensitive Field-Effect Transistor for High-Performance Aqueous Chemical Application
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2018.2890741
Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2922996
Performance Potential of 2D Kagome Lattice Interconnects
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2947285
La théologie protestante de Karl Barth comme arrière-plan d’une « théologie existentielle » chez Denis de Rougemont
来源期刊:IEEE Electron Device LettersDOI:10.4000/edl.1904
Les antiquités de Russie méridionale au Louvre et la collection Messaksoudy
来源期刊:IEEE Electron Device LettersDOI:10.4000/edl.1670
Trilogie de la personne. La pensée philosophique et l’engagement politique de Denis de Rougemont
来源期刊:IEEE Electron Device LettersDOI:10.4000/edl.1889
Energy-Storing Hybrid 3D Vertical Memory Structure
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2936253
La responsabilité sociale de l’écrivain. Denis de Rougemont et le PEN Club dans les années 1970
来源期刊:IEEE Electron Device LettersDOI:10.4000/edl.1848
Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2899630
Physics-Guided Neural Modeling for Low-Dimensional Thermoelectric Module
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2944395
High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress
来源期刊:IEEE Electron Device LettersDOI:10.1109/LED.2019.2931089

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