A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2919773
A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2895208
Novel Photovoltaic Micro Crack Detection Technique
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2907019
High Thermal Performance and Reliability of Quantum-Dot-Based Light-Emitting Diodes With Watt-Level Injection Power
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2018.2886299
Performance Monitor Counters: Interplay Between Safety and Security in Complex Cyber-Physical Systems
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2898882
Life Model of the Electrochemical Migration Failure of Printed Circuit Boards Under NaCl Solution
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2938010
Adaptive Body Biasing Circuit for Reliability and Variability Compensation of a Low Power RF Amplifier
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2899399
LUT’s Sliding Backup
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2898724
Online Estimation of the Junction Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT Modules
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2923457
New Worst-Case Timing for Standard Cells Under Aging Effects
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2893017
IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2910182
Modeling and Analysis of Electro-Thermal Impact of Crosstalk Induced Gate Oxide Reliability in Pristine and Intercalation Doped MLGNR Interconnects
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2933035
Multilevel Redundancy Allocation for SEU Mitigation of DSP Codes Based on OMA
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2899611
New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/IIRW.2018.8727076
Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2912853
Reduced-Code Static Linearity Test of Split-Capacitor SAR ADCs Using an Embedded Incremental $\\Sigma\\Delta$ Converter
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2891298
The Impact of the Electrode Performance on the Endurance Properties of the Phase Change Memory Device
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2893770
Evaluation of Three-Point Bending Strength of Thin Silicon Die With a Consideration of Geometric Nonlinearity
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2937988
Synchrotron X-Ray Microdiffraction Investigation of Scaling Effects on Reliability for Through-Silicon Vias for 3-D Integration
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2933794
The Estimation of the Lifetime Variation for Power Devices
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2940672
Photovoltaic Hot-Spots Fault Detection Algorithm Using Fuzzy Systems
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2944793
Thermal Management for Portable Electronics Using a Piezoelectric Micro-Blower
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2933021
Investigation of Hot-Carrier Degradation in 0.18- $\\mu$ m MOSFETs for the Evaluation of Device Lifetime and Digital Circuit Performance
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2938319
Hybrid-Organic-Photodetector Containing Chemically Treated ZnMgO Layer With Promising and Reliable Detectivity, Responsivity and Low Dark Current
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2895668
Dynamic Voltage Overshoot During Triggering of an SCR-Type ESD Protection
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2952713
Area-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunction
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2910351
The Competing Aging Effects on SRAM Operating Life Tests
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2916481
Analytical Model for RDF-Induced Threshold Voltage Fluctuations in Double-Gate MOSFET
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2910197
Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2949064
Development of a Microvia Fatigue Life Model Using a Response Surface Method
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2898179
Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2906997
Low-Cost Digital Test Solution for Symbol Error Detection of RF ZigBee Transmitters
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2898769
Power Module Interconnection Reliability in BTS Applications
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2920316
Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2949449
P-Edge NMOSFET for Improving TID Tolerance
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2891268
Design of VT-Sensitive Ring Oscillators for Monitoring Gate-TDDB Environmental Stress
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2018.2886566
HealthLog Monitor: Errors, Symptoms and Reactions Consolidated
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2892206
Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2923107
Time Integration Damage Model for Sn3.5Ag Solder Interconnect in Power Electronic Module
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2891949
Tensile-Fatigue Behavior of Sintered Copper Die-Attach Material
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2916784
Reliability of High-Voltage GaN-Based Light-Emitting Diodes
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2917005
Design Rules for TSV Membranes
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2923669
Guest Editorial Robust System Design: IEEE International On-Line Testing and Robust System Design Symposium (IOLTS) 2018
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2898735
Reliability Characterization and Modeling of High Speed Ge Photodetectors
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2945996
Fault-Independent Test-Generation for Software-Based Self-Testing
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/iolts.2018.8474081
Impact of Electrical Stress on $\\gamma$ Ray Irradiated Double Polysilicon Self-Aligned (DPSA) PNP Bipolar Transistors
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2923170
On Thermal Acceleration of Medical Device Polymer Aging
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2907080
Comparative Study on the Transients Induced by Single Event Effect and Space Electrostatic Discharge
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2950929
Investigation of Electrical Characteristics Dependency of Roll-to-Roll Printed Solar Cells With Silver Electrodes on Mechanical Tensile Strain
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2949116
Modeling Tool for Capacitive RF MEMS Operating Bias Voltage Optimization
来源期刊:IEEE Transactions on Device and Materials ReliabilityDOI:10.1109/TDMR.2019.2935340