Active and Passive Electronic Components
ISSN:0882-7516

Active and Passive Electronic Components

ACT PASSIV ELECTRON
学科领域:工程技术
是否预警:不在预警名单内
是否OA:
录用周期:13 Weeks
新锐分区:工程技术4区
年发文量:4
影响因子:0.8
JCR分区:Q4

基本信息

-
0882-7516ESCI/Scopus收录/DOAJ开放期刊
0.8
0
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区
N/A
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
ESCI
Q4
318/368
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC
ESCI
Q4
328/368
暂无h-index数据
4
33%-13 WeeksUSD925ENGINEERING, ELECTRICAL & ELECTRONIC-
0%
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
75.00%100%-
CiteScore:2.00
SJR:0.182
SNIP:0.289
学科类别分区排名百分位
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
Q3
208 / 305
大类:Materials Science
小类:Electrical and Electronic Engineering
Q3
566 / 970

期刊高被引文献

High Voltage Ride through Control of PMSG-Based Wind Turbine Generation System Using Supercapacitor
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/3489252
New Concept of Differential Effective Mobility in MOS Transistors
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/5716230
Preparation and Characterization of Printed LTCC Substrates for Microwave Devices
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/6473587
A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/5135637
Full-Phase Operation Transresistance-Mode Precision Full-Wave Rectifier Designs Using Single Operational Transresistance Amplifier
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/1584724
Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/1928494
Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/4578501
BDD-Based Topology Optimization for Low-Power DTIG FinFET Circuits
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/8292653
Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
来源期刊:Active and Passive Electronic ComponentsDOI:10.1155/2019/8425198

相关文章

2026年3月发布(新锐分区)
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区
N/A